Title :
Low temperature proton induced upsets in NMOS resistive load static RAM
Author :
Stapor, W.J. ; McDonald, P.T. ; Swickert, S.L. ; Campbell, A.B. ; Massengill, L.W. ; Kerns, S.E.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Proton-induced upset measurements were performed on some NMOS resistive-load static RAMs for temperatures down to -125°C. Results show that the upset cross section strongly depends on temperature as well as the incident beam flux. SPICE modeling for the critical charge versus temperature is not sufficient to explain the data. An explanation is provided that describes multiple subcritical linear-energy-transfer particle strikes within RAM cell integration times that cause upsets
Keywords :
field effect integrated circuits; integrated circuit technology; integrated memory circuits; proton effects; radiation hardening (electronics); random-access storage; semiconductor technology; -125 to 125 C; NMOS resistive load static RAM; RAM cell integration times; SEU; SPICE modeling; SRAM; critical charge versus temperature; incident beam flux; low temperature operation; multiple subcritical linear-energy-transfer particle strikes; proton induced upsets; single event upset; upset cross section; Logic devices; MOS devices; Nitrogen; Performance evaluation; Protons; Single event upset; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
