• DocumentCode
    1001484
  • Title

    Monolayer heterointerfaces and thin layers (~10 Ã\x85) in AlxGa1¿xAs-GaAs superlattices grown by metalorganic chemical vapour deposition

  • Author

    Brown, J.M. ; Holonyak, N. ; Ludowise, M.J. ; Dietze, W.T. ; Lewis, C.R.

  • Author_Institution
    University of Illinois at Urbana-Champaign, Electrical Engineering Research Laboratory and Materials Research Laboratory, Urbana, USA
  • Volume
    20
  • Issue
    5
  • fYear
    1984
  • Firstpage
    204
  • Lastpage
    205
  • Abstract
    Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1¿xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ~10 Å.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical vapour deposition; crystal growth from vapour; gallium arsenide; semiconductor growth; semiconductor superlattices; transmission electron microscope examination of materials; AlxGa1-xAs-GaAs superlattices; MOCVD; QWHs; TEM; lattice fringe images; layer thickness 10 Angstrom; metalorganic chemical vapour deposition; monolayer heterointerfaces; quantum-well heterostructures; semiconductor growth; semiconductors; thin layers; transmission electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840135
  • Filename
    4249748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001484