Title :
A comparison of neutron-induced SEU rates in Si and GaAs devices
Author :
Tsao, Chen H. ; Silberberg, Rein ; Letaw, John R.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The single-event-upset rates due to neutron-induced nuclear recoils were calculated for Si and GaAs components using the HETC and MCNP codes and the ENDF database for (n, p) and (n, α) reactions. For the same critical charge and sensitive volume, the upset rate in Si exceeds that of GaAs by a factor of about 1.7, mainly because more energy is transferred in neutron interactions with lighter Si nuclei. The upset rates due to neutrons are presented as functions of critical charge and atmospheric altitude. Upsets induced by cosmic-ray nuclei, secondary protons, and neutrons are compared
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; neutron effects; semiconductor device testing; silicon; (n, α) reactions; (n, p) reactions; ENDF database; GaAs; HETC; MCNP codes; Si; atmospheric altitude; cosmic-ray nuclei; critical charge; neutron-induced SEU rates; nuclear recoils; secondary protons; sensitive volume; single-event-upset rates; Atmosphere; Energy loss; Energy measurement; Gallium arsenide; Ionization; Iron; Neutrons; Nuclear power generation; Protons; Space vehicles;
Journal_Title :
Nuclear Science, IEEE Transactions on
