A comparison of neutron-induced SEU rates in Si and GaAs devices

Author

Tsao, Chen H. ; Silberberg, Rein ; Letaw, John R.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1634

Lastpage

1637

Abstract

The single-event-upset rates due to neutron-induced nuclear recoils were calculated for Si and GaAs components using the HETC and MCNP codes and the ENDF database for (n, p) and (n, α) reactions. For the same critical charge and sensitive volume, the upset rate in Si exceeds that of GaAs by a factor of about 1.7, mainly because more energy is transferred in neutron interactions with lighter Si nuclei. The upset rates due to neutrons are presented as functions of critical charge and atmospheric altitude. Upsets induced by cosmic-ray nuclei, secondary protons, and neutrons are compared

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; neutron effects; semiconductor device testing; silicon; (n, α) reactions; (n, p) reactions; ENDF database; GaAs; HETC; MCNP codes; Si; atmospheric altitude; cosmic-ray nuclei; critical charge; neutron-induced SEU rates; nuclear recoils; secondary protons; sensitive volume; single-event-upset rates; Atmosphere; Energy loss; Energy measurement; Gallium arsenide; Ionization; Iron; Neutrons; Nuclear power generation; Protons; Space vehicles;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25511

Filename

25511