Title :
SEU test techniques for 256 K static RAMs and comparisons of upsets by heavy ions and protons
Author :
Koga, R. ; Kolasinski, W.A. ; Osborn, J.V. ; Elder, J.H. ; Chitty, R.
Author_Institution :
Aerospace Corp., Los Angeles, CA, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Test procedures needed to observe the single-event phenomena for various 256 K CMOS/NMOS static RAMs are described. The tests were conducted with both protons and heavy ions, yielding correlated comparisons of results. Most of the single-event vulnerability data were obtained using EDI EDH8832C, IDT IDT71256, OMNI-WAVE OW62256, and RCA XCDM62256 32 K×8 static RAMs. Among the four device types only OW62256s were resistant to single-event latchup. Estimates of the single-event-upset (SEU) rate in space show that OW62256s are the least susceptible devices. The test and reduction methods took into consideration multiple upsets caused by a single ion, the effect of read/write access time, and scaling related to feature size. The scaling study was made possible by comparing the SEU test results of an additional four types of radiation-hardened IDT static RAMs
Keywords :
CMOS integrated circuits; integrated memory circuits; ion beam effects; large scale integration; proton effects; radiation hardening (electronics); random-access storage; 256 kbit; CMOS/NMOS; EDI EDH8832C; IDT IDT71256; OMNI-WAVE OW62256; RCA XCDM62256; SEU test techniques; feature size; heavy ions; proton effects; radiation-hardened IDT static RAMs; read/write access time; reduction methods; single ion; single-event latchup; single-event phenomena; static RAMs; vulnerability data; Argon; Computer errors; Current supplies; Error correction; Power supplies; Protons; Read-write memory; Single event upset; Temperature; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
