Title :
FM noise of index-guided GaAlAs diode lasers
Author :
Schimpe, R. ; Stegm¿¿ller, B. ; Harth, W.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
The FM-noise spectrum of index-guided GaAlAs-diode lasers is measured for different lengths of the laser cavity. The observed FM-noise peak near the internal laser resonance and the decrease of the FM noise with increasing cavity length is in agreement with a model which is considering the spontaneous emission noise source. From the measured noise data, the linewidth enhancement factor is determined.
Keywords :
III-V semiconductors; aluminium compounds; frequency modulation; gallium arsenide; laser cavity resonators; optical communication equipment; optical noise measurement; semiconductor junction lasers; FM-noise peak; FM-noise spectrum; cavity length; index-guided GaAlAs diode lasers; internal laser resonance; laser cavity; linewidth enhancement factor; semiconductor lasers; semiconductors; spontaneous emission noise source;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840137
