Total dose radiation characteristics of SOI MOSFETs fabricated using ISLANDS technology

Author

Matloubian, Mishel ; Zorinsky, Eldon J. ; Spratt, David B.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1650

Lastpage

1652

Abstract

Total-dose-radiation results for n- and p-channel silicon-on-insulator (SOI) MOSFETs fabricated using ISLANDS (oxidation of porous silicon) technology and subjected to Co-60 gamma radiation are reported. The back-gates of both n- and p-channel transistors were hard to 1 Mrad(Si) with either -5 or 0 V on the substrate during irradiation. The buildup of radiation-induced interface traps at the back-gate of n-channel MOSFETs compensated for the threshold voltage shift due to oxide-trapped charges. The front-gate hardness was similar to that of bulk MOSFETs

Keywords

electron traps; gamma-ray effects; insulated gate field effect transistors; oxidation; 1E6 rad; ⁶⁰Co; ISLANDS technology; SOI MOSFETs; back-gate; front-gate hardness; n-channel; oxidation; oxide-trapped charges; p-channel transistors; radiation-induced interface traps; threshold voltage shift; total-dose-radiation characteristics; Circuits; Dielectric substrates; Electrons; FETs; Isolation technology; Laboratories; MOSFETs; Semiconductor films; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25514

Filename

25514