High-speed frequency dividers using GaAs/GaAlAs high-electron-mobility transistors

Author

Lee, Charlotte P. ; Lee, S.J. ; Hou, Dong ; Miller, Douglas L. ; Anderson, R.J. ; Sheng, N.H.

Author_Institution

Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA

Volume

20

Issue

5

fYear

1984

Firstpage

217

Lastpage

219

Abstract

Very-high-speed divide-by-four circuits have been fabricated by using modulation-doped GaAs/GaAlAs high-electron-mobility transistors. The circuits consist of two T-connected D-flip-flops and are capable of operating at 3.6 GHz with a power dissipation of 0.46 mW per gate at room temperature, and at 5.2 GHz with a power dissipation of 0.78 mW per gate at 77 K. The speed-power products achieved are the lowest ever reported.

Keywords

III-V semiconductors; aluminium compounds; counting circuits; digital integrated circuits; field effect integrated circuits; flip-flops; frequency dividers; gallium arsenide; integrated circuit technology; semiconductor doping; 77K operation; GaAs/GaAlAs; HEMT; MBE; T-connected D-flip-flops; divide-by-four circuits; fabrication; field effect IC; frequency 3.6 GHz; frequency dividers; high speed circuits; high-electromobility transistors; modulation doped structures; performance; power dissipation; room temperature operation; semiconductor; speed-power products;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19840144

Filename

4249757