DocumentCode :
1001611
Title :
An SEU-hardened CMOS data latch design
Author :
Rockett, Leonard R., Jr.
Author_Institution :
IBM Corp., Manassas, VA, USA
Volume :
35
Issue :
6
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
1682
Lastpage :
1687
Abstract :
A single-event-upset hardened CMOS data latch design is described. The hardness is achieved by virtue of the design; thus no fabrication process or design ground-rule development is required. Hardness is gained with comparatively little adverse impact on performance. Cyclotron tests have provided hardness verification
Keywords :
CMOS integrated circuits; combinatorial circuits; integrated logic circuits; radiation hardening (electronics); CMOS data latch design; hardness verification; performance; single-event-upset hardened; CMOS logic circuits; Circuit simulation; Circuit testing; Clocks; Cyclotrons; Fabrication; Latches; Logic design; Process design; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.25522
Filename :
25522
Link To Document :
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