Title :
An SEU-hardened CMOS data latch design
Author :
Rockett, Leonard R., Jr.
Author_Institution :
IBM Corp., Manassas, VA, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
A single-event-upset hardened CMOS data latch design is described. The hardness is achieved by virtue of the design; thus no fabrication process or design ground-rule development is required. Hardness is gained with comparatively little adverse impact on performance. Cyclotron tests have provided hardness verification
Keywords :
CMOS integrated circuits; combinatorial circuits; integrated logic circuits; radiation hardening (electronics); CMOS data latch design; hardness verification; performance; single-event-upset hardened; CMOS logic circuits; Circuit simulation; Circuit testing; Clocks; Cyclotrons; Fabrication; Latches; Logic design; Process design; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on