Title :
Highly efficient single-longitudinal-mode operation of antireflection-coated 1.3 ¿m DFB-DC-PBH LD
Author :
Yamaguchi, Masaki ; Kitamura, Masayuki ; Mito, I. ; Murata, Shotaro ; Kobayashi, Kaoru
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Lasing characteristics for a 1.3 ¿m InGaAsP/InP distributed-feedback double-channel planar buried-heterostructure laser diode (DFB-DC-PBH LD) have been remarkably improved by antireflection (AR) coating applied on the front facet. CW single-longitudinal-mode (SLM) operation power as high as 55 mW, and differential quantum efficiency as high as 36%, have been obtained from the coated front facet. CW SLM operation has been achieved up to 105°C.
Keywords :
III-V semiconductors; antireflection coatings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; 1.3 microns; 55 mW; CW operation; III-V semiconductor; InGaAsP/InP distributed-feedback double-channel planar buried-heterostructure laser diode; antireflection coating; coated front facet; differential quantum efficiency; lasing characteristics; single-longitudinal-mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840157
