Title :
High sensitivity of VPE-grown InGaAs/InP-heterostructure APD with buffer layer and guard-ring structure
Author :
Matsushima, Y. ; Noda, Yasuo ; Kushiro, Y. ; Seki, N. ; Akiba, Shigeyuki
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10¿9 error rate at 280 Mbit/s was as low as ¿43 dBm, which corresponded to 2 and 7 dB improvements over a Ge-APD at 1.52 and 1.59 ¿m, respectively.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; -43 dBm; 280 Mbit/s; III-V semiconductor; InGaAs/InP-heterostructure APD; VPE; avalanche photodiode; buffer layer; edge breakdown; guard-ring structure; optical power; sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840158
