Title :
Processing of InP MIS devices monitored via photoluminescence measurements
Author :
Krawczyk, S. ; Bailly, B. ; Sautreuil, B. ; Blanchet, R. ; Viktorovitch, P.
Author_Institution :
Ecole Centrale de Lyon, Laboratoire d´´Electronique, Automatique et Mesures Electriques, ERA (CNRS) 661 `Génie Electronique¿, Ecully, France
Abstract :
A remarkable one-to-one correlation is observed between photoluminescence (PL) intensity and surface state density in the upper part of the gap of n-type InP. Measurement of the PL intensity is shown to be a simple and efficient method for monitoring each individual technological step of fabrication of MIS devices on InP.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; monitoring; photoluminescence; semiconductor device manufacture; III-V semiconductor; InP MIS devices; MIS devices; MISFET; fabrication; n-type InP; photoluminescence measurements; production monitoring; surface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840171
