• DocumentCode
    1001872
  • Title

    Processing of InP MIS devices monitored via photoluminescence measurements

  • Author

    Krawczyk, S. ; Bailly, B. ; Sautreuil, B. ; Blanchet, R. ; Viktorovitch, P.

  • Author_Institution
    Ecole Centrale de Lyon, Laboratoire d´´Electronique, Automatique et Mesures Electriques, ERA (CNRS) 661 `Génie Electronique¿, Ecully, France
  • Volume
    20
  • Issue
    6
  • fYear
    1984
  • Firstpage
    255
  • Lastpage
    256
  • Abstract
    A remarkable one-to-one correlation is observed between photoluminescence (PL) intensity and surface state density in the upper part of the gap of n-type InP. Measurement of the PL intensity is shown to be a simple and efficient method for monitoring each individual technological step of fabrication of MIS devices on InP.
  • Keywords
    III-V semiconductors; indium compounds; insulated gate field effect transistors; monitoring; photoluminescence; semiconductor device manufacture; III-V semiconductor; InP MIS devices; MIS devices; MISFET; fabrication; n-type InP; photoluminescence measurements; production monitoring; surface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840171
  • Filename
    4249785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001872