• DocumentCode
    1001914
  • Title

    Room-temperature pulsed operation of GaxIn1¿xAsyP1¿y/Gax´In1¿x´Asy´P1¿y´ DH visible injection laser grown on (100) GaAs by a two-phase-solution technique

  • Author

    Kawanishi, H. ; Aota, Tomoyuki ; Iwakami, Tetsuro

  • Author_Institution
    Kogakuin University, Department of Electronic Engineering, Tokyo, Japan
  • Volume
    20
  • Issue
    6
  • fYear
    1984
  • Firstpage
    263
  • Lastpage
    264
  • Abstract
    Room-temperature pulsed operation of a GaxIn1¿xAsyP1¿y/Gax´In1¿x´Asy´P1¿y´ double-heterostructure visible injection laser diode is reported. The laser diode is grown by liquid-phase epitaxy on (100) GaAs, and the active layer is grown by a two-phase-solution technique. The threshold current density is 16 kA/cm2 for the laser diode lasing at about 721 nm at room temperature.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; (100) GaAs; GaxIn1-xAsyP1-y/Ga x´In1-x´Asy´P1- -y´; III-V semiconductors; double-heterostructure visible injection laser diode; information processing; information storage systems; liquid-phase epitaxy; room temperature pulsed operation; threshold current density; two-phase-solution technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840176
  • Filename
    4249790
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001914