Title :
Hot-carrier simulation for MOSFETs using a high-speed Monte Carlo method
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
8/1/1988 12:00:00 AM
Abstract :
Models of hot-carrier-induced phenomena in the high-energy region for small-scale MOSFETs are presented. A free-flight optimization technique has also been developed to simulate the high-energy carrier dynamics by the Monte Carlo method with reasonable CPU time. The hot-carrier effect was investigated in detail from the carrier velocity and energy distribution viewpoint with rigorous treatment of carrier scattering processes, especially for photogeneration and impact ionization. The simulated results were in good agreement with experimental results. The analyses revealed that the hot-carrier effect is mainly dominated by carrier temperature, but is suppressed by impact ionization
Keywords :
Monte Carlo methods; digital simulation; electronic engineering computing; hot carriers; insulated gate field effect transistors; semiconductor device models; CPU time; carrier temperature; carrier velocity; energy distribution; experimental results; free-flight optimization technique; high-energy region; high-speed Monte Carlo method; hot carrier simulation; hot-carrier effect; hot-carrier-induced phenomena; impact ionization; models; photogeneration; rigorous treatment of carrier scattering processes; simulated results; small-scale MOSFETs; Degradation; Fluid flow; Hot carrier effects; Hot carriers; Impact ionization; MOSFETs; Optimization methods; Particle scattering; Temperature; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
