Acoustooptic resonance in deep-etched GaAs-AlGaAs electrooptic modulators

Author

Watson, Christopher D. ; Poirier, Maxime ; Heaton, John M. ; Lewis, Meirion ; Boudreau, Marcel

Author_Institution

Bookham Technol., Ottawa, Ont., Canada

Volume

22

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

1598

Lastpage

1603

Abstract

Deep-etched GaAs-AlGaAs waveguide modulators are shown to generate acoustic waves that can cause elastooptic anomalies in the modulator response. The theory of acoustooptic interactions in linear electrooptic modulators is described and a one-dimensional (1-D) approximation of a deep-etched GaAs-AlGaAs waveguide modulator is developed. The 1-D theory is shown to predict the acoustooptic resonance phenomena that is seen in experimental devices.

Keywords

III-V semiconductors; acousto-optical effects; aluminium compounds; electro-optical modulation; etching; gallium arsenide; ridge waveguides; GaAs-AlGaAs; acoustooptic resonance; deep-etched GaAs-AlGaAs; elastooptics; electrooptic modulators; waveguide modulators; Acoustic waveguides; Acoustic waves; Electrooptic modulators; Electrooptical waveguides; Etching; Optical planar waveguides; Optical waveguides; Planar waveguides; Resonance; Semiconductor waveguides; Acoustooptic; EOM; elastooptic; electrooptic modulator; gallium arsenide; ridge waveguide;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2004.829221

Filename

1303737