Title :
Acoustooptic resonance in deep-etched GaAs-AlGaAs electrooptic modulators
Author :
Watson, Christopher D. ; Poirier, Maxime ; Heaton, John M. ; Lewis, Meirion ; Boudreau, Marcel
Author_Institution :
Bookham Technol., Ottawa, Ont., Canada
fDate :
6/1/2004 12:00:00 AM
Abstract :
Deep-etched GaAs-AlGaAs waveguide modulators are shown to generate acoustic waves that can cause elastooptic anomalies in the modulator response. The theory of acoustooptic interactions in linear electrooptic modulators is described and a one-dimensional (1-D) approximation of a deep-etched GaAs-AlGaAs waveguide modulator is developed. The 1-D theory is shown to predict the acoustooptic resonance phenomena that is seen in experimental devices.
Keywords :
III-V semiconductors; acousto-optical effects; aluminium compounds; electro-optical modulation; etching; gallium arsenide; ridge waveguides; GaAs-AlGaAs; acoustooptic resonance; deep-etched GaAs-AlGaAs; elastooptics; electrooptic modulators; waveguide modulators; Acoustic waveguides; Acoustic waves; Electrooptic modulators; Electrooptical waveguides; Etching; Optical planar waveguides; Optical waveguides; Planar waveguides; Resonance; Semiconductor waveguides; Acoustooptic; EOM; elastooptic; electrooptic modulator; gallium arsenide; ridge waveguide;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2004.829221
