• DocumentCode
    1002113
  • Title

    Direct parameter-extraction method for laser diode rate-equation model

  • Author

    Gao, Jianjun ; Li, Xiuping ; Flucke, Jens ; Boeck, Georg

  • Author_Institution
    Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany
  • Volume
    22
  • Issue
    6
  • fYear
    2004
  • fDate
    6/1/2004 12:00:00 AM
  • Firstpage
    1604
  • Lastpage
    1609
  • Abstract
    A new direct extraction method to determine the small-signal and rate-equation model parameters for laser diode is presented in this paper. This method differs from previous ones by extracting the whole model parameters without global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of extrinsic and intrinsic parameters are extracted by using a set of closed-form expressions based on the input reflection coefficients and modulation responses taken from on-wafer measurement. Simulated and measured results for the input reflection coefficients and modulation responses exhibit good agreement over a wide range of bias points.
  • Keywords
    semiconductor device models; semiconductor lasers; direct parameter-extraction method; laser diode; rate-equation model; Circuits; Closed-form solution; Data mining; Diode lasers; Equations; Optical coupling; Optical reflection; Optimization methods; Semiconductor device measurement; Transmission line measurements; LD; Laser diode; parameter extraction; rate-equation model;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2004.829211
  • Filename
    1303738