Title :
Direct parameter-extraction method for laser diode rate-equation model
Author :
Gao, Jianjun ; Li, Xiuping ; Flucke, Jens ; Boeck, Georg
Author_Institution :
Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany
fDate :
6/1/2004 12:00:00 AM
Abstract :
A new direct extraction method to determine the small-signal and rate-equation model parameters for laser diode is presented in this paper. This method differs from previous ones by extracting the whole model parameters without global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of extrinsic and intrinsic parameters are extracted by using a set of closed-form expressions based on the input reflection coefficients and modulation responses taken from on-wafer measurement. Simulated and measured results for the input reflection coefficients and modulation responses exhibit good agreement over a wide range of bias points.
Keywords :
semiconductor device models; semiconductor lasers; direct parameter-extraction method; laser diode; rate-equation model; Circuits; Closed-form solution; Data mining; Diode lasers; Equations; Optical coupling; Optical reflection; Optimization methods; Semiconductor device measurement; Transmission line measurements; LD; Laser diode; parameter extraction; rate-equation model;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2004.829211