DocumentCode
1002113
Title
Direct parameter-extraction method for laser diode rate-equation model
Author
Gao, Jianjun ; Li, Xiuping ; Flucke, Jens ; Boeck, Georg
Author_Institution
Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany
Volume
22
Issue
6
fYear
2004
fDate
6/1/2004 12:00:00 AM
Firstpage
1604
Lastpage
1609
Abstract
A new direct extraction method to determine the small-signal and rate-equation model parameters for laser diode is presented in this paper. This method differs from previous ones by extracting the whole model parameters without global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of extrinsic and intrinsic parameters are extracted by using a set of closed-form expressions based on the input reflection coefficients and modulation responses taken from on-wafer measurement. Simulated and measured results for the input reflection coefficients and modulation responses exhibit good agreement over a wide range of bias points.
Keywords
semiconductor device models; semiconductor lasers; direct parameter-extraction method; laser diode; rate-equation model; Circuits; Closed-form solution; Data mining; Diode lasers; Equations; Optical coupling; Optical reflection; Optimization methods; Semiconductor device measurement; Transmission line measurements; LD; Laser diode; parameter extraction; rate-equation model;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2004.829211
Filename
1303738
Link To Document