Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode

A 1/f noise model for diodes operating in the thermionic-emission mode under forward-bias conditions has been developed. The model is based on mobility and diffusivity fluctuations occurring in the space-charge region and accounts for the current-limiting role of the metal-semiconductor interface The bias dependence of the 1/f noise spectral density calculated from this model is in excellent agreement with the results of the authors´ experiments but is at variance with the predictions of a model developed by T.G.M. Kleinpenning (1979). From the experimental data, a value of 4.2×10^-9 for the Hooge parameter is derived. This value is in good agreement with theoretical calculation for electrons in silicon