Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode

Author

Luo, Min-Yih ; Bosman, Gijs ; Van Der Ziel, Aldert ; Hench, Larry L.

Author_Institution

Dept. of Electr. Eng. & Mater. Sci. Eng., Florida Univ., Gainesville, FL, USA

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1351

Lastpage

1356

Abstract

A 1/f noise model for diodes operating in the thermionic-emission mode under forward-bias conditions has been developed. The model is based on mobility and diffusivity fluctuations occurring in the space-charge region and accounts for the current-limiting role of the metal-semiconductor interface The bias dependence of the 1/f noise spectral density calculated from this model is in excellent agreement with the results of the authors´ experiments but is at variance with the predictions of a model developed by T.G.M. Kleinpenning (1979). From the experimental data, a value of 4.2×10^-9 for the Hooge parameter is derived. This value is in good agreement with theoretical calculation for electrons in silicon

Keywords

Schottky-barrier diodes; electron device noise; random noise; semiconductor device models; semiconductor-metal boundaries; 1/f noise; 1/f noise model; 1/f noise spectral density; Hooge parameter; Schottky-barrier diodes; bias dependence; current-limiting role; diffusivity fluctuations; forward-bias conditions; metal-semiconductor interface; mobility fluctuations; space-charge region; thermionic-emission mode; Acoustical engineering; Electrons; Fluctuations; Frequency; Low-frequency noise; Predictive models; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Semiconductor-metal interfaces;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2558

Filename

2558