Title :
New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold
Author :
Toffano, Z. ; Destrez, A. ; Hassine, Lotfi
Author_Institution :
Ecole Superieur d´Electr., Gif-sur-Yvette, France
Abstract :
Linewidth measurements of singlemode and multimode InGaAsP lasers were made above and below threshold with adapted interferometers. Linewidth against inverse power plots Delta nu =f(1/P), show different Schawlow-Townes slopes above and below threshold. Differences have been observed depending on singlemode or multimode laser behaviour. In the singlemode case the linewidth enhancement factor has been determined ( alpha =2.6) by extrapolating and correlating results above and below threshold.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser variables measurement; light interferometry; semiconductor junction lasers; spectral line breadth; InGaAsP lasers; Schawlow-Townes slopes; laser threshold; linewidth enhancement determination; multimode; nterferometers; semiconductor lasers; singlemode; spectrum analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920006