Keywords :
III-V semiconductors; aluminium compounds; frequency modulation; gallium arsenide; laser cavity resonators; laser modes; semiconductor junction lasers; 0.2 to 1.0 GHz; AlGaAs; FM; III-V semiconductors; coupled-cavity laser; current-to-frequency-modulation transfer function; frequency-modulation characteristics; injection currents; modulation indices; semiconductor lasers; single longitudinal mode;
