• DocumentCode
    1002436
  • Title

    Pulsed and CW high temperature operation of InGaAs/GaAs strained layer vertical cavity surface emitting lasers

  • Author

    Von Lehmen, Ann ; Banwell, T. ; Carrion, L. ; Stoffel, N. ; Florez, L. ; Harbison, J.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    21
  • Lastpage
    22
  • Abstract
    The performance of strained layer InGaAs/GaAs vertical cavity surface emitting lasers defined by ion implantation over a approximately 75 degrees C temperature range is reported on. Maximum CW output levels for the temperature extremes of 10 and 86 degrees C are 7.5 MW and 200 mu W, respectively for 20*20 mu m2 devices. The temperature dependence of the CW threshold current exhibits exponential behaviour to 80 degrees C.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; 10 to 86 degC; 200 muW to 7.5 mW; CW output levels; CW threshold current; InGaAs-GaAs; high temperature operation; ion implantation; pulsed operation; semiconductor lasers; strained layer; surface emitting lasers; temperature dependence; vertical cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920013
  • Filename
    255899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002436