Title :
Gbit/s modulation of heavily Zn-doped surface-emitting InGaAsP/InP DH LED
Author :
Suzuki, A. ; Inomoto, Y. ; Hayashi, J. ; Isoda, Y. ; Uji, T. ; Nomura, H.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Pulse-response characteristics for a heavily zinc-doped surface-emitting InGaAsP/InP DH LED have been studied. 1.6 Gbit/s NRZ modulation has been achieved, and the feasibility of using the surface-emitting LED in a Gbit/s transmission system has been studied.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; modulation; p-n heterojunctions; Gbit/s modulation; NRZ modulation; heavily Zn-doped surface-emitting InGaAsP/InP DH LED; pulse-response characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840186
