• DocumentCode
    1002439
  • Title

    Gbit/s modulation of heavily Zn-doped surface-emitting InGaAsP/InP DH LED

  • Author

    Suzuki, A. ; Inomoto, Y. ; Hayashi, J. ; Isoda, Y. ; Uji, T. ; Nomura, H.

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    20
  • Issue
    7
  • fYear
    1984
  • Firstpage
    273
  • Lastpage
    274
  • Abstract
    Pulse-response characteristics for a heavily zinc-doped surface-emitting InGaAsP/InP DH LED have been studied. 1.6 Gbit/s NRZ modulation has been achieved, and the feasibility of using the surface-emitting LED in a Gbit/s transmission system has been studied.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; modulation; p-n heterojunctions; Gbit/s modulation; NRZ modulation; heavily Zn-doped surface-emitting InGaAsP/InP DH LED; pulse-response characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840186
  • Filename
    4250264
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002439