• DocumentCode
    1002526
  • Title

    GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

  • Author

    Toivonen, Mikko ; Salokatve, A. ; Hovinen, M. ; Pessa, M.

  • Author_Institution
    Dept. of Phys., Tampere Univ. of Technol., Finland
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    32
  • Lastpage
    34
  • Abstract
    A GaAs/AlGaAs staircase SAM-APD containing a 10 stage undoped staircase multiplication region is demonstrated. Doping dipoles were inserted in GaAs/Al0.45Ga0.55. As interfaces to increase the effective conduction band offset. Typical dark current at 0.9 VB was 70 pA. The maximum avalanche gain of 1500 was measured near the onset of breakdown. An effective ionisation rate ratio keff=0.2 was obtained from multiplication noise measurements.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; semiconductor doping; GaAs-Al 0.45Ga 0.55As; SAM type; avalanche photodiode; delta-doped staircase; doping dipoles insertion; effective conduction band offset; multiplication noise measurements; separated absorption layer; undoped staircase multiplication region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920020
  • Filename
    255906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002526