• DocumentCode
    1002554
  • Title

    1.5< lambda <1.7 mu m strained multiquantum well InGaAs/InGaAsP diode lasers

  • Author

    Bour, D.P. ; Martinelli, R.U. ; Enstrom, R.E. ; Stewart, T.R. ; DiGiuseppe, N.G. ; Hawrylo, F.Z. ; Cooper, D.B.

  • Author_Institution
    David Sarnoff Res. Center, Princeton, NJ, USA
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    37
  • Lastpage
    39
  • Abstract
    The long wavelength limitations of strained In0.7Ga0.3As/InGaAsP four-quantum well (QW) lasers are investigated. For this confining structure and QW composition, wavelengths range from 1.52 to 1.72 mu m for QW thicknesses between 33 and 70 AA, and there is an optimum QW thickness of approximately 40 AA.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.5 to 1.7 micron; 33 to 70 AA; InGaAs-InGaAsP; QW thicknesses; confining structure; diode lasers; four-quantum well; strained multiquantum well;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920023
  • Filename
    255909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002554