Title :
Zero-net-strain and conventionally strained InGaAsP/InP multiquantum well lasers
Author :
Perrin, S.D. ; Cooper, Diana Marina
Abstract :
A comparison is made between 16 well zero-net-strain and conventionally strained MQW lasers. Short devices of each structure exhibit low threshold currents and high output powers. For both types of device, the value of T0 is found to be smaller than for 16 well unstrained lasers. Analysis of RIN spectra imply maximum 3 dB bandwidths in the range 34-42 GHz.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 34 to 42 GHz; InGaAsP-InP/int; MQW lasers; RIN spectra; conventionally strained; maximum 3 dB bandwidths; multiquantum well lasers; output powers; threshold currents; zero-net-strain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920040
