Title :
0.5 W 2-21 GHz monolithic GaAs distributed amplifier
Author :
Kim, Bumki ; Tserng, Hua-Quen
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of an amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 × 300 μm FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The poweradded efficiency was 14%. The linear gain was 5 + 1 dB over the same frequency band.
Keywords :
III-V semiconductors; amplifiers; field effect transistors; gallium arsenide; microwave parametric amplifiers; 0.5 W; 2 to 21 GHz; FET; III-V semiconductor; field effect integrated circuit; gate loss; linear gain; monolithic GaAs distributed amplifier; series capacitors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840197
