DocumentCode
1002821
Title
0.5 W 2-21 GHz monolithic GaAs distributed amplifier
Author
Kim, Bumki ; Tserng, Hua-Quen
Author_Institution
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Volume
20
Issue
7
fYear
1984
Firstpage
288
Lastpage
289
Abstract
A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of an amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 × 300 μm FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The poweradded efficiency was 14%. The linear gain was 5 + 1 dB over the same frequency band.
Keywords
III-V semiconductors; amplifiers; field effect transistors; gallium arsenide; microwave parametric amplifiers; 0.5 W; 2 to 21 GHz; FET; III-V semiconductor; field effect integrated circuit; gate loss; linear gain; monolithic GaAs distributed amplifier; series capacitors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840197
Filename
4250485
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