Title :
Fabrication of ultra-thin free-standing wires of silicon nitride
Author :
Lee, K.L. ; Ahmed, Hameeza ; Kelly, Michael J. ; Wybourne, M.N.
Author_Institution :
University of Cambridge, Department of Engineering, Cambridge, UK
Abstract :
We describe the fabrication of free-standing wires of amorphous silicon nitride of approximate dimensions 125 × 0.15 × 0.1 ¿m, which are important initial test structures for examining quantum deviations from Ohm´s law and Joule´s law predicted to occur in fine geometry samples.
Keywords :
semiconductor technology; silicon compounds; size effect; Joule´s law; Ohm´s law; amorphous Si3N4; fabrication; quantum deviations; ultrathin free-standing wires;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840198
