Title :
Current gain of silicon bipolar transistor with polysilicon emitter contact
Author_Institution :
Solid State Physics Laboratory, Delhi, India
Abstract :
A two-region analysis is presented to predict the common-emitter current gain of a bipolar transistor with the polysilicon contact to the emitter for a case when the recombinations at the mono-poly interface are not negligible. The calculated current-gain enhancement for typical device parameters and for different values of interface recombination velocity show that the current-gain enhancement and its increase with decrease of emitter width is smaller for the interface with larger recombinations.
Keywords :
bipolar transistors; elemental semiconductors; silicon; Si bipolar transistor; carrier recombinations; common-emitter current gain; current gain; elemental semiconductor; mono-poly interface; polySi emitter contact; two-region analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840201
