Title :
High-efficiency Q-band GaAs FET oscillator
Author :
Tserng, Hua-Quen ; Kim, Bumki
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
A microstrip GaAs FET oscillator using a 75 × 0.25 ¿m device has achieved an output power of 10 mW with an efficiency of 10% at 36 GHz. This oscillator was intended for local-oscillator applications at Q-band.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; microwave oscillators; 10 mW; 36 GHz; III-V semiconductor; Q-band GaAs FET oscillator; local-oscillator applications; microstrip oscillator; output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840203
