• DocumentCode
    1002881
  • Title

    InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

  • Author

    Parrilla, M.L. ; Newson, D.J. ; Quayle, J.A. ; MacBean, M.D.A. ; Skellern, D.J.

  • Author_Institution
    Macquarie Univ., North Ryde, NSW, Australia
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    InP/InGaAs double-heterojunction bipolar transistors (DHBTs) have been fabricated with an emitter area of 9*9 mu m2 using a nonselfaligned process. Small-signal current gain in excess of 400 was obtained. Device measurements given an ft=39 GHz which, to the authors´ knowledge, is the highest value reported for an InP/InGaAs DHBT. The value of ft is in excess of 30 GHz for a range of current densities from 8 to 100 kA cm-2.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 39 GHz; DHBT; HBT; InP-InGaAs; current-driving capability; double-heterojunction bipolar transistors; nonselfaligned process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920052
  • Filename
    255938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002881