• DocumentCode
    1002883
  • Title

    CMOS circuits made in lamp-recrystallised silicon-on-insulator

  • Author

    Vu, D.P. ; Leguet, C. ; Haond, M. ; Bensahel, D. ; Colinge, J.P.

  • Author_Institution
    CNET, Meylan, France
  • Volume
    20
  • Issue
    7
  • fYear
    1984
  • Firstpage
    298
  • Lastpage
    299
  • Abstract
    Polysilicon film was deposited on 100 mm oxidised silicon wafers. The film was recrystallised using a focused halogen lamp and served as substrate material for CMOS circuit fabrication. A mobility of 480 and 180 cm2/V s is found in N- and P-channel MOS transistors, respectively, and the threshold voltage spread is very low. 65-stage ring oscillators were also realised, which exhibit a 6 ns delay per stage at 5 V supply voltage.
  • Keywords
    chemical vapour deposition; field effect integrated circuits; CMOS circuits; LPCVD; SOI; focused halogen lamp; lamp recrystallised Si-on-insulator; mobility; polySi film; ring oscillators; substrate material; threshold voltage spread;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840204
  • Filename
    4250492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002883