Title :
Schottky-collector vertical PNM bipolar transistor
Author :
Akbar, Shazia ; Ratanaphanyarat, S. ; Kuang, Jente B. ; Chu, S.F. ; Hsieh, C.M.
Author_Institution :
IBM Gen. Technol. Div., Hopewell Junction, NY, USA
Abstract :
A submicrometre inverted vertical PNM bipolar transistor with a platinum-silicide (PtSi) silicon Schottky collector-base diode and a p+n emitter-based diode is demonstrated. The transistor presents normal bipolar device characteristics with a DC current gain as high as 40. Faster switches can be made by using PNM transistors. They offer a desirable performance leverage when implemented in VLSI logic circuits.
Keywords :
Schottky effect; bipolar transistors; elemental semiconductors; platinum compounds; semiconductor switches; silicon; DC current gain; PtSi-Si; Schottky collector-base diode; VLSI logic circuits; bipolar device characteristics; p +n emitter-based diode; submicron inverted type; switches; vertical PNM bipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920053
