• DocumentCode
    1002902
  • Title

    Schottky-collector vertical PNM bipolar transistor

  • Author

    Akbar, Shazia ; Ratanaphanyarat, S. ; Kuang, Jente B. ; Chu, S.F. ; Hsieh, C.M.

  • Author_Institution
    IBM Gen. Technol. Div., Hopewell Junction, NY, USA
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    86
  • Lastpage
    87
  • Abstract
    A submicrometre inverted vertical PNM bipolar transistor with a platinum-silicide (PtSi) silicon Schottky collector-base diode and a p+n emitter-based diode is demonstrated. The transistor presents normal bipolar device characteristics with a DC current gain as high as 40. Faster switches can be made by using PNM transistors. They offer a desirable performance leverage when implemented in VLSI logic circuits.
  • Keywords
    Schottky effect; bipolar transistors; elemental semiconductors; platinum compounds; semiconductor switches; silicon; DC current gain; PtSi-Si; Schottky collector-base diode; VLSI logic circuits; bipolar device characteristics; p +n emitter-based diode; submicron inverted type; switches; vertical PNM bipolar transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920053
  • Filename
    255939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002902