DocumentCode
1003189
Title
Model for DMOST threshold voltage
Author
Grahn, Kaj ; Andersson, Mats ; Kuivalainen, P. ; Eranen, S.
Author_Institution
Tech. Res. Centre of Finland, Espoo, Finland
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1384
Lastpage
1385
Abstract
An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.
Keywords
insulated gate bipolar transistors; insulated gate field effect transistors; power transistors; semiconductor device models; DMOST; I-V characteristics; IGBT transistor structures; MOS-gated power transistors; analytical model; channel region; substrate doping gradient; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920880
Filename
256027
Link To Document