• DocumentCode
    1003216
  • Title

    Effects of doping levels at source and drain regions on the performance of a-Si FET

  • Author

    Katoh, K. ; Imagi, S. ; Watanabe, H.

  • Author_Institution
    Stanley Electric Co., Research & Development Laboratory, Yokohama, Japan
  • Volume
    20
  • Issue
    25
  • fYear
    1984
  • Firstpage
    1064
  • Lastpage
    1065
  • Abstract
    The transfer characteristics of a-Si FETs are remarkably improved by adopting the phosphorus doped n+-layer at the source and drain contacts. Excess doping of phosphorus, however, causes degradation in the transfer characteristics after heat treatment. The optimum doping level is obtained by depositing the n+-layer at 1 to 5×10¿3 molar ratios of PH3/SiH4.
  • Keywords
    amorphous semiconductors; doping profiles; elemental semiconductors; field effect transistors; semiconductor doping; silicon; FET; P doped n+ layer; Si:H,P; amorphous Si; doping levels; drain regions; elemental semiconductors; heat treatment; performance study; source region; transfer characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840727
  • Filename
    4250528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003216