• DocumentCode
    1003231
  • Title

    Electron mobility in indium nitride

  • Author

    Tansley, T.L. ; Foley, C.P.

  • Author_Institution
    Macquarie University, School of Maths & Physics, North Ryde, Australia
  • Volume
    20
  • Issue
    25
  • fYear
    1984
  • Firstpage
    1066
  • Lastpage
    1068
  • Abstract
    Measurements of the transport properties of RF sputtered polycrystalline films of indium nitride are presented. The maximum electron mobility measured is 5000 cm2V¿1s¿1 at 150 K, and the lowest electron concentrations obtained are 5×1016 cm¿3 at 300 K falling to a constant value of 3×1016 in the range 30¿150 K. These results are significantly better than those hitherto reported. The temperature dependence of mobility is attributed to ionised impurity sscattering at low temperatures and space charge scattering at higher temperatures.
  • Keywords
    III-V semiconductors; carrier mobility; electronic conduction in crystalline semiconductor thin films; impurity scattering; indium compounds; semiconductor thin films; sputtered coatings; 150K; 30 to 150K; 300K; III-V semiconductors; RF sputtered polycrystalline films; electron mobility; ionised impurity scattering; space charge scattering; temperature dependence; transport properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840729
  • Filename
    4250530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003231