Substrate noise-coupling characterization and efficient suppression in CMOS technology

Author

Yeh, Wen-Kuan ; Chen, Shuo-Mao ; Fang, Yean-Kuen

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan

Volume

51

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

817

Lastpage

819

Abstract

This brief investigates the substrate noise coupling using S-parameters measurement. Radio frequency domain analysis shows that the noise isolation is strongly dependent on layout geometry, including the parameters such as p-n junction, physical separation distance, guard ring (GR), and deep n-well (DNW). We found that the noise coupling can be efficiently diminished by incorporating GR and DNW structures.

Keywords

CMOS integrated circuits; S-parameters; electromagnetic coupling; integrated circuit layout; integrated circuit noise; p-n junctions; CMOS technology; DNW; GR; RF domain analysis; S-parameters; deep n-well; guard ring; layout geometry; noise isolation; p-n junction; physical separation distance; radio frequency; substrate noise-coupling; CMOS technology; Coupling circuits; Geometry; Isolation technology; Mobile communication; Noise measurement; Radio frequency; Scattering parameters; Testing; Very large scale integration; DNW; GR; RF; Radio frequency; deep n-well; guard ring; substrate noise coupling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.825814

Filename

1303844