Title :
Two-dimensional impurity profiling near the mask edge using anodisation
Author_Institution :
KAIST, Department of Electrical Engineering, Seoul, Korea
Abstract :
An experimental scheme for measuring the two-dimensional impurity profile near the mask edge is described, based on forming a U-groove in silicon by anisotropic etching leaving only the sidewall resistors. 2-D impurity profiling of the sidewall resistor is achieved by constant-voltage anodisation and etching the resultant oxide. An n × m resistor array structure for simultaneously obtaining the 2-D impurity profile is also described.
Keywords :
doping profiles; insulated gate field effect transistors; semiconductor technology; 2-D impurity profiling; U-groove in Sc; anisotropic etching; anodisation; constant-voltage anodisation; doping profiling; experimental scheme; mask edge; nÃ\x97 m resistor array structure; oxide etching; side-wall resistor; sidewall resistors; submicron MOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850414
