Title :
Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodetector for long-wavelength high-data-rate fibre-optic systems
Author :
Sussmann, R.S. ; Ash, R.M. ; Moseley, A.J. ; Goodfellow, R.C.
Author_Institution :
Plessey Research (Caswell) Limited, Towcester, UK
Abstract :
A novel GaInAs substrate illuminated photodetector structure is reported for the 1.0¿1.7 ¿m wavelength range with capacitance as low as 0.02 pF, packaging stray capacitance below 0.02 pF, 97% quantum efficiency and subnanoampere leakage current. The device is rugged, epoxy-free, does not use an integral fibre pig-tail and wire bonding to the detector chip is not required.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; optical fibres; photodiodes; GaInAs PIN photodetector; GaInAs substrate illuminated photodetector structure; III-V semiconductors; capacitance 0.02 pF; epoxy-free; flip-chip bonded photodetector; long-wavelength high-data-rate fibre-optic systems; p-i-n photodiode; packaging stray capacitance; quantum efficiency; rugged; subnanoampere leakage current; ultra low capacitance; wavelength range 1.0 to 1.7 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850419
