Title :
A 512 Mb Two-Channel Mobile DRAM (OneDRAM) With Shared Memory Array
Author :
Kim, Jung-Sik ; Nam, Kyungwoo ; Oh, Chi Sung ; Sohn, Han Gu ; Lee, Donghyuk ; Kim, Sooyoung ; Park, Jong-Wook ; Kim, Yongjun ; Kim, Mi-Jo ; Kim, Jin-Guk ; Lee, Hocheol ; Kwon, Jinhyoung ; Seo, Dong ; Jun, Young-Hyun ; Kim, Kinam
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Hwaseong
Abstract :
A 512 Mb two-channel mobile DRAM (OneDRAM) is developed with 90 nm technology. It can operate on a 1.8 V power supply as two separate mobile DDR or SDR DRAMs through each channel with maximum data rate of 333 Mbps/pin because of its exclusive accessibility from each channel to memory arrays. Data exchange between two channels is also possible by sharing one common memory array, and a new control scheme of DRAM for this sharing is proposed. The new control scheme is based on direct addressing mode to achieve compatibility with normal DRAM interface together with fast data transfer speed between two channels.
Keywords :
CMOS memory circuits; DRAM chips; mobile radio; CMOS memory integrated circuits; DDR DRAM; OneDRAM; SDR DRAM; data transfer speed; direct addressing mode; normal DRAM interface; shared memory array; size 90 nm; storage capacity 512 Mbit; two-channel mobile DRAM; voltage 1.8 V; Cellular phones; Communication system control; Consumer electronics; Control systems; Memory management; Modems; Personal digital assistants; Power supplies; Process control; Random access memory; CMOS memory integrated circuits; DRAM chips; memory management; shared memory systems;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2004523
