A 512 Mb Two-Channel Mobile DRAM (OneDRAM) With Shared Memory Array

Author

Kim, Jung-Sik ; Nam, Kyungwoo ; Oh, Chi Sung ; Sohn, Han Gu ; Lee, Donghyuk ; Kim, Sooyoung ; Park, Jong-Wook ; Kim, Yongjun ; Kim, Mi-Jo ; Kim, Jin-Guk ; Lee, Hocheol ; Kwon, Jinhyoung ; Seo, Dong ; Jun, Young-Hyun ; Kim, Kinam

Author_Institution

Memory Div., Samsung Electron. Co. Ltd., Hwaseong

Volume

43

Issue

11

fYear

2008

Firstpage

2381

Lastpage

2389

Abstract

A 512 Mb two-channel mobile DRAM (OneDRAM) is developed with 90 nm technology. It can operate on a 1.8 V power supply as two separate mobile DDR or SDR DRAMs through each channel with maximum data rate of 333 Mbps/pin because of its exclusive accessibility from each channel to memory arrays. Data exchange between two channels is also possible by sharing one common memory array, and a new control scheme of DRAM for this sharing is proposed. The new control scheme is based on direct addressing mode to achieve compatibility with normal DRAM interface together with fast data transfer speed between two channels.

Keywords

CMOS memory circuits; DRAM chips; mobile radio; CMOS memory integrated circuits; DDR DRAM; OneDRAM; SDR DRAM; data transfer speed; direct addressing mode; normal DRAM interface; shared memory array; size 90 nm; storage capacity 512 Mbit; two-channel mobile DRAM; voltage 1.8 V; Cellular phones; Communication system control; Consumer electronics; Control systems; Memory management; Modems; Personal digital assistants; Power supplies; Process control; Random access memory; CMOS memory integrated circuits; DRAM chips; memory management; shared memory systems;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2008.2004523

Filename

4685423