Title :
Low threshold InGaAs strained quantum well laser with lateral npn current blocking structure grown by molecular beam epitaxy
Author :
Takamori, Toshi ; Watanabe, K. ; Kamijoh, T.
Author_Institution :
Okl Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
7/16/1992 12:00:00 AM
Abstract :
A sophisticated current confinement structure using the amphoteric nature of MBE grown Si-doped GaAs and AlGaAs is demonstrated for an index-guided InGaAs strained quantum well laser. Lateral and vertical npn current blocking layers were formed for the first time by a self aligned process. Devices showed threshold current of 10 mA and total slope efficiency of 0.56 under room temperature CW operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor junction lasers; semiconductor quantum wells; 10 mA; 56 percent; CW operation; GaAs-InGaAs; GaAs:Si; InGaAs; MBE; amphoteric nature; current confinement structure; index grained lasers; lateral npn current blocking structure; molecular beam epitaxy; room temperature; self aligned process; semiconductors; slope efficiency; strained quantum well laser; threshold current; vertical npn current blocking layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920902
