Title :
Degradation mechanisms induced by temperature in power MESFETs
Author :
Canali, C. ; Fantini, F. ; Umena, L. ; Zanoni, E.
Author_Institution :
UniversitÃ\xa0 di Padova, Istituto di Elettrotecnica e di Elettronica, Padova, Italy
Abstract :
Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallised, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the `burn-out¿ of the devices in practical applications.
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; insulated gate field effect transistors; power transistors; AU-metallised; GaAs; III-V semiconductors; burn-out; degradation mechanisms; gate source leakage; independent failure mechanisms; open channel resistance; power MESFETs; temperature induced failures; unpassivated;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850423
