Title :
High-power (575 mW) single-lobed emission from a phased-array laser
Author :
Welch, D.F. ; Scifres, D. ; Cross, Philip ; Kung, Hsin-Wen ; Streifer, W. ; Burnham, R.D. ; Yaeli, J.
Author_Institution :
Spectra Diode Laboratories, San Jose, USA
Abstract :
Phased-array lasers which emit up to 575 mW in a 1.9 degree (FWHM) single far-field lobe corresponding to the lowest-order supermode are described. Single-lobe operation is achieved in lasers whose stripes are offset near the facet by half a period from the stripes in the central part of the cavity and are linearly chirped across the diode. This stripe geometry tends to lower the threshold of the single-lobe mode relative to that of the undesired double-lobe mode.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; FWHM; GaAlAs; III-V semiconductors; high power laser; lowest-order supermode; phased-array laser; power 575 mW; semiconductor lasers; single far-field lobe; single-lobed emission; stripe geometry; threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850426
