Title :
High power singlemode edge-emitting master oscillator power amplifier
Author :
O´Brien, Stephen ; Parke, R. ; Welch, D.F. ; Mehuys, D. ; Scifres, D.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
7/16/1992 12:00:00 AM
Abstract :
An edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500 mu m long singlemode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at approximately 981.5 nm in an edge-emitting fashion with maximum powers in excess of 175 mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110 mWCW.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; semiconductor junction lasers; semiconductor quantum wells; 110 to 175 mW; 500 micron; 981.5 nm; InGaAs quantum well; active region; distributed Bragg reflector laser; edge emitting lasers; high power lasers; longitudinal mode operation; master oscillator power amplifier; monolithically integrated; semiconductors; single mode lasers; singlemode amplifier; strained quantum well; transverse mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920909
