DocumentCode
1003509
Title
InGaAs/InGaAsP/InP strained-layer quantum well lasers at approximately 2 mu m
Author
Forouhar, S. ; Ksendzov, A. ; Larsson, A. ; Temkin, H.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1431
Lastpage
1432
Abstract
The first successful operation of InGaAs strained layer quantum well (SL-QW) injection lasers at approximately 2 mu m is reported. The threshold current density and the external differential quantum efficiency of 5 mu m wide and 800 mu m long ridge waveguide lasers were 2.5kA/cm2 and 6%, respectively. The devices had a reverse leakage current of less than 20 mu A at -1 V indicating epitaxial layers with low defect density.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; -1 V; 2 micron; 20 muA; 5 micron; 6 percent; 800 micron; InGaAs-InGaAsP-InP; InP substrates; epitaxial layers; external differential quantum efficiency; injection lasers; low defect density; operation; reverse leakage current; ridge waveguide lasers; semiconductors; strained-layer quantum well lasers; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920910
Filename
256057
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