• DocumentCode
    1003530
  • Title

    Room temperature negative differential resistance of metal (CoSi2)/insulator (CaF2) resonant tunnelling diode

  • Author

    Suemasu, Takashi ; Watanabe, Manabu ; Asada, Minoru ; Suzuki, Nobuhiro

  • Author_Institution
    Tokyo Inst. of Technol., Japan
  • Volume
    28
  • Issue
    15
  • fYear
    1992
  • fDate
    7/16/1992 12:00:00 AM
  • Firstpage
    1432
  • Lastpage
    1434
  • Abstract
    The first room temperature negative differential resistance in a nanometre-thick metal (CoSi2)/insulator (CaF2) resonant tunneling diode is reported. This device consists of heterostructures with two metallic (CoSi2) wells and three insulator (CaF2) barriers grown on n-Si
  • Keywords
    calcium compounds; cobalt compounds; metal-insulator-semiconductor devices; negative resistance; resonant tunnelling devices; superlattices; tunnel diodes; 0.9 nm; 1.9 nm; 300 K; 77 K; CoSi 2-CaF 2-Si; MISD; Si substrate; heterostructures; insulator barriers; metallic wells; nanometre-thick metal; peak to valley current ratios; resonant tunnelling diode; room temperature negative differential resistance; silicides; ultra thin layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920911
  • Filename
    256058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003530