• DocumentCode
    1003535
  • Title

    Reproducible low-resistivity AuMn ohmic contact for p-type GaAs

  • Author

    Dubon-Chevallier, C. ; Duchenois, A.M. ; Bresse, J.F. ; Ankri, D.

  • Author_Institution
    Centre National d´Etudes des Télécommunications, PAB Laboratoire de Bagneux, Bagneux, France
  • Volume
    21
  • Issue
    14
  • fYear
    1985
  • Firstpage
    614
  • Lastpage
    615
  • Abstract
    A novel ohmic contact 96% Au-4% Mn has been established for p-type GaAs. A specific contact resistivity of 2 × 10¿7 ¿cm2 has been obtained on 2 × 1019 cm¿3 epitaxial layers after alloying, and a resistivity of 2 × 10¿6 ¿cm2 has been obtained on 2 × 1020 cm¿3 doped layers without alloying. The contact is stable and reproducible.
  • Keywords
    III-V semiconductors; gallium arsenide; gold alloys; manganese alloys; ohmic contacts; Au-Mn; GaAs; III-V semiconductors; ohmic contact; p-type; reproducible low-resistivity contact;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850433
  • Filename
    4250620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003535