Title :
Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration
Author :
Liu, Y.M. ; Prucnal, Paul R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
7/16/1992 12:00:00 AM
Abstract :
The fabrication and characterisation of deeply-etched single-mode GeSi rib waveguides grown on an intrinsic silicon substrate, for monolithic optoelectronic integration are reported. The waveguides exhibit strong singlemode guiding and good confinement with a propagation loss of approximately 2.5+or-1 dB/cm at 1.3 mu m.
Keywords :
Ge-Si alloys; integrated optics; integrated optoelectronics; optical losses; optical waveguides; 1.3 micron; GeSi rib waveguides; GeSi-Si; RIB waveguides; Si based optoelectronic integration; Si substrate; characterisation; confinement; deeply etched waveguides; fabrication; monolithic optoelectronic integration; propagation loss; single mode waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920912
