DocumentCode
1003598
Title
High frequency power AlGaAs/GaAs heterojunction bipolar transistors
Author
Camps, Thierry ; Bailbe, J.P. ; Marty, Alain ; Tasselli, Josiane ; Cazarre, A.
Author_Institution
Lab. d´Autom. et d´Anal. des syst., CNRS, Toulouse, France
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1444
Lastpage
1445
Abstract
The frequency performance of a GaAlAs/GaAs heterojunction power bipolar transistor grown by molecular beam epitaxy (MBE) is presented. A maximum oscillation frequency of 32 GHz for a dissipated power of 2W has been measured for large devices.
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; power transistors; semiconductor device models; solid-state microwave devices; 2 W; 32 GHz; HF power HBT; MBE; SHF; heterojunction bipolar transistors; large devices; maximum oscillation frequency; molecular beam epitaxy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920919
Filename
256064
Link To Document