Title :
Measurements of near-infrared frequency mixing by metal-semiconductor point-contact diodes
Author :
Bava, Elio ; Beverini, Nicolá ; Carelli, Giorgio ; Michele, Andrea De ; Galzerano, Gianluca ; Maccioni, Enrico ; Moretti, Augusto ; Prevedelli, Marco ; Sorrentino, Fiodor ; Svelto, Cesare
Author_Institution :
Dept. of Elettronica e Informazione, IEIIT-CNR, Milan, Italy
Abstract :
The performances of metal-semiconductor point-contact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart.
Keywords :
Gunn diodes; III-V semiconductors; frequency locked loops; frequency measurement; gallium compounds; indium compounds; mixers (circuits); phase locked loops; semiconductor lasers; semiconductor-metal boundaries; 1 GHz; 72 GHz; 850 nm; GaSb; Gunn diode; InAs; InSb; diode lasers; frequency bridge; frequency measurement; metal-semiconductor point-contact diodes; mixers; near-infrared frequency mixing; near-infrared region; optical mixer; oscillator; phase-lock circuit; semiconductor layers; Bridge circuits; Circuit testing; Diode lasers; Frequency measurement; Gas lasers; Gunn devices; Oscillators; Performance evaluation; Semiconductor diodes; Semiconductor lasers; Diode laser; frequency measurement; near-infrared; optical mixer; phase-lock;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2005.851061
