DocumentCode
1003717
Title
Dual spot visible laser diodes
Author
Geels, R.S. ; Welch, D.F. ; Scifres, D.R. ; Bour, D.P. ; Treat, D.W. ; Bringans, R.D.
Author_Institution
Spectra Diode Labs., San Jose, CA, USA
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1460
Lastpage
1462
Abstract
Room temperature, continuous wave operation of independently addressable, dual spot, single spatial mode GaInP laser diodes emitting at 675 nm is reported. Threshold currents of 30mA and singlemode output powers exceeding 30 mW per emitter have been obtained. Crosstalk between emitters is as low a 0.3% with a 50 mu m centre to centre spacing.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor junction lasers; 30 mA; 38 mW; GaInP; continuous wave operation; dual spot; independently addressable; room temperature operation; semiconductor lasers; single spatial mode; singlemode output powers; visible laser diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920929
Filename
256074
Link To Document