Title :
Tailored-gain broad-area semiconductor laser with single-lobed diffraction-limited far-field pattern
Author :
Lindsey, C. ; Derry ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Applied Physics Department, Pasadena, USA
Abstract :
We demonstrate a 60 ¿m-wide asymmetric tailored-gain broad-area semiconductor laser with a single-lobed diffraction-limited far-field pattern 2.5° wide. The method used to achieve gain tailoring may be used to create nearly arbitrary two-dimensional spatial gain distributions within a broad-area laser.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductors; arbitrary two-dimensional spatial gain distributions; asymmetric tailored-gain broad-area semiconductor laser; gain tailoring; laser width 60 microns; pattern lobe width 2.5°; single-lobed diffraction-limited far-field pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850475
