Title :
Buried channel charge-coupled device on gas-source MBE grown InP
Author :
Han, K.Y. ; Iyer, Ravishankar ; Hafich, M. ; Robinson, G.Y. ; Lile, D.L.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
Abstract :
The first epitaxial-channel InP CCDs on semi-insulating substrates have been demonstrated using gas-source MBE grown layers. Channel isolation was achieved using a mesa etch, and the two level overlapping gate structure was insulated using indirect plasma enhanced CVD grown SiO2. Initial results indicate stable device operation with charge transfer efficiencies, at 1-3 MHz operating frequencies, of approximately 0.99.
Keywords :
III-V semiconductors; charge-coupled devices; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; 1 to 3 MHz; CVD grown SiO 2; InP substrate; SiO 2-InP; buried channel CCD; channel isolation; charge transfer efficiencies; charge-coupled device; epitaxial-channel; gas-source MBE grown layers; mesa etch; semi-insulating substrates; stable device operation; two level overlapping gate structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921144
